Power Transistor

Description The RT550PD is designed for base stations and cell extenders as 300 ~ 3000MHz. Product Features • High Output Power P1dB = 40dBm(typ)@2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price Applicat

Power Transistor

文件：185.82 Kbytes Page：3 Pages

Power Transistor

Power Transistor

文件：185.82 Kbytes Page：3 Pages

Low Noise Transistors

Low Noise Transistors NPN Silicon

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment.

HIGH CURRENT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 5.0 Amperes)

VOLTAGE 20 to 60 Volt CURRENT 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capac