位置：首页 > IC中文资料 > RSD080N06FMMTL
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Power MOSFET Description The G080N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
N-Channel 60 V (D-S) MOSFET 文件：1.68923 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
OptiMOS??Power-Transistor Features Low gate charge for fast switching applications 文件：421.18 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS짰 Power-Transistor 文件：446.46 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
OptiMOS??Power-Transistor Features Low gate charge for fast switching applications 文件：421.18 Kbytes Page：10 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
健特 |
1948+ |
SIP |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
CMO |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
CHIMEI奇美 |
23+ |
800480 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
AAC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CMO |
24+ |
65200 |
|||||
G |
24+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
G |
25+ |
S |
2000 |
原装正品,假一罚十! |
|||
CMO |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
AUO |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
RSD080N06FMMTL芯片相关品牌
RSD080N06FMMTL规格书下载地址
RSD080N06FMMTL参数引脚图相关
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RSD080N06FMMTL数据表相关新闻
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2019-3-7
DdatasheetPDF页码索引
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