Quad-Band GSM/EDGE PA Module

Description This 7 x 7mm PAM is a 50Ω, quad-band dual mode, GSM/EDGE PA module for 2.75G radio applications. In EDGE mode, the module supports High/Low power mode feature to maximize efficiency in low power operation. The module provides 50Ω input and output terminals. The module also includes cl

Quadrature Modulator for 900 MHz-Band Mobile Communications

Description The CXA1852N is an IC package that combines a π/2 phase shifter with a quadrature modulator. This is suitable for 900 MHz digital cordless telephone (CT2) and digital cellular. Features • Quadrature modulator IC has a built-in π/2 phase shifter. • Local frequency = 30

1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS

Description The TS185x (single, dual and quad) can operate with voltages as low as 1.8 V. They feature both input and output rail-to-rail (1.71 at VCC = 1.8 V,RL = 2 kΩ), 120 μA current consumption and 530 kHz gain bandwidth product. With this low consumption and a sufficient GBP for many applica

1.8V INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS

Description The TS185x (single, dual and quad) can operate with voltages as low as 1.8 V. They feature both input and output rail-to-rail (1.71 at VCC = 1.8 V,RL = 2 kΩ), 120 μA current consumption and 530 kHz gain bandwidth product. With this low consumption and a sufficient GBP for many applica

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1852 is a switching device which can be driven directly by a 2.5-V power source. The µPA1852 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

High Power-Factor Preregulator

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