POWER AMPLIFIER MODULE FOR BROADBAND

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包装：散装 描述：RELAY GEN PURPOSE DPDT 25A 12V 继电器 功率继电器，高于 2 A

包装：托盘 描述：RELAY GEN PURPOSE DPDT 25A 24V 继电器 功率继电器，高于 2 A

Power Relay

文件：186.37 Kbytes Page：3 Pages

Power Relay RM 8

文件：191.89 Kbytes Page：3 Pages

POWER AMPLIFIER MODULE FOR BROADBAND

文件：226.47 Kbytes Page：10 Pages

Power Relay RM 8

文件：191.89 Kbytes Page：3 Pages

Power Relay

文件：186.37 Kbytes Page：3 Pages

Power Relay

文件：186.37 Kbytes Page：3 Pages

Power Relay RM 8

文件：191.89 Kbytes Page：3 Pages

Power Relay RM 8

文件：191.89 Kbytes Page：3 Pages

Power Relay

文件：186.37 Kbytes Page：3 Pages

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

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