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RM2310V

丝印代码:8060;N-Channel Enhancement Mode Power MOSFET

Feature Rds (on)

RECTRON

丽正

RM2310V

MOSFET

RECTRON

丽正

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

NTE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

STMICROELECTRONICS

意法半导体

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

RM2310V产品属性

  • 类型

    描述

  • Id @ 25C (A):

    3.0 A

  • Rds-on (typ) (mOhms):

    78 mOhms

  • Total Gate Charge (nQ) typ:

    6 nQ

  • Maximum Power Dissipation (W):

    1.67 W

  • Vgs(th) (typ):

    1.7 V

  • Input Capacitance (Ciss):

    460 pF

  • Polarity:

    N-Channel

  • Mounting Style:

    SMD/SMT

  • Package / Case:

    SOT-23

  • Certified (AEC-Q101...etc):

    AEC-Q101

更新时间:2026-5-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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公司优势库存 热卖中!
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AIRBORN
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原装正品,假一罚十
泰科SCHRACK
24+
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全新原装
AIRBORN
三年内
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只做原装正品

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