丝印代码：AN60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

MOSFET

丝印代码：AN60；N-Channel Enhancement Mode Power MOSFET

Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

MOSFET

丝印代码：AK100DCT；Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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N-Channel Enhancement Mode MOSFET

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