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型号 功能描述 生产厂家 企业 LOGO 操作
RLD2N65

N-Channel Enhancement MOSFET

Features  VDS=650V, ID=2A  RDS(ON)=4Ω@VGS=10V(Typ.)  High Power and current handing capability  Lead free product is acquired Main Applications  Battery Protection  Load Switch  Power Management

GWSEMI

唯圣电子

Composite Transistor For Muting Application Silicon NPN Epitaxial Type

DESCRIPTION RT2N65M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=10 KΩ) ● Mini package for easy mounting APPLICATION muting circuit、 switching circuit

ISAHAYA

谏早电子

650V N-Channel MOSFET

文件:871.49 Kbytes Page:8 Pages

SEMIHOW

650V N-Channel MOSFET

文件:936.64 Kbytes Page:7 Pages

SEMIHOW

650V N-Channel MOSFET

文件:871.49 Kbytes Page:8 Pages

SEMIHOW

StarMOST Power MOSFET

文件:201.76 Kbytes Page:2 Pages

GOOD-ARK

固锝电子

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