2.5A General Purpose Silicon Rectifier

Features • Low forward voltage drop • Low reverse leakage • High forward surge current capability • High temperature soldering: 260°C/10 seconds, 0.375” (9.5mm) lead length at 5 lbs (2.3kg) tension • RoHS Compliance

2.5 Amp Silicon Rectifier 50 to 1000 Volts

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普通整流二极管

封装/外壳：DO-204AC，DO-15，轴向 包装：带盒（TB） 描述：DIODE GPP 2.5A DO-15 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：DIODE GPP 2.5A DO-15 分立半导体产品 二极管 - 整流器 - 单

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

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