isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

600V - 20A - SJ MOS FET High Speed Power Switching

Features  Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching

600V - 20A - SJ MOS FET High Speed Power Switching

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600V - 20A - SJ MOS FET High Speed Power Switching

600V - 20A - SJ MOS FET High Speed Power Switching

600V - 20A - SJ MOS FET High Speed Power Switching

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600V - 20A - SJ MOS FET High Speed Power Switching

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6 AMP AXIAL-LEAD SILICON RECTIFIER DIODES

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPA Series • 16 Pin DIP SSR • Ratings to 1A @ 280 VAC • SCR output • Voltage or current-control input • Zero-crossing (resistive loads) output

PANEL MOUNT

Features • Ratings from 3A to 7A @ 60 VDC • Bi-Polar Transistor Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS Screw and Washer • Redesigned Housing with Anti-Rotation Barriers • AC and DC Control • Epoxy Free Design

3-7Amp 60 Vdc DC Output

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panel mount

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