Silicon N Channel MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching

Power MOSFETs

500V - 14A - MOS FET High Speed Power Switching

Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.42  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard

500 V - 14 A - MOS FET High Speed Power Switching

Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

General-Purpose Power MOSFETs

Power MOSFETs

500 V - 14 A - MOS FET High Speed Power Switching

文件：94.84 Kbytes Page：7 Pages

THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

Works with low cost MSP430 based LaunchPad platform

文件：335.81 Kbytes Page：15 Pages

Works with MSP430 Launchpad

文件：554.13 Kbytes Page：14 Pages

Customer Specification

文件：71.08 Kbytes Page：3 Pages

Strip amplifier, it makes long LED strip implementation much more conveniently.

文件：150.82 Kbytes Page：1 Pages