600V - 2A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

Power MOSFETs

600V - 2A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.7 Ω typ. (at ID = 1 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching

600V - 2A - MOS FET High Speed Power Switching

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