Silicon N Channel Power MOS FET High Speed Power Switching

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60 V - 25 A - N Channel Power MOS FET High Speed Power Switching

文件：96.37 Kbytes Page：7 Pages

Silicon N Channel Power MOS FET High Speed Power Switching

60 V - 25 A - N Channel Power MOS FET High Speed Power Switching

文件：96.37 Kbytes Page：7 Pages

60 V - 25 A - N Channel Power MOS FET High Speed Power Switching

文件：96.37 Kbytes Page：7 Pages

60 V - 25 A - N Channel Power MOS FET High Speed Power Switching

文件：96.37 Kbytes Page：7 Pages

Double-Ended Cordsets

BCC M425-M423-3A-302-EX43T2-050 Basic features Approval/Conformity CE cULus WEEE

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28

Features • Three Floating High-Side Drivers in Bootstrap Operation to 100V • 200mA Source / 350mA Sink Output Current Capability • Outputs Tolerant to Negative Transients, dV/dt Immune • Logic Input 3.3V Capability • Internal Deadtime of 290ns to Protect MOSFETs and IGBTs • Matched Prop Dela

Schottky Barrier Diode (Twin Type 쨌 Cathode Common) 160V, 5A Rectifier

160V, 5A Rectifier Features • Tj=150°C. • Low forward voltage (VF max=0.80V). • Short reverse recovery time. • Low switching noise. • High reliability due to planar structure. • Attachment workability is good by Mica-less package. Applications • High frequency rectification (switching reg

For LEAD TYPE

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Sensor

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