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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RJK03L3DNS | Silicon N Channel Power MOS FET with Schottky Barrier Diode Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free | RENESAS 瑞萨 |   | |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free | RENESAS 瑞萨 | |
RJK03L3DNS产品属性
- 类型
描述
- 型号
RJK03L3DNS
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESES |
23+ |
QFN |
3342 |
原装现货假一赔十 |
|||
RENESAS |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
2022+ |
DFN56 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
RENESAS |
24+ |
QFN8 |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
21+ |
QFN |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
RENESAS/瑞萨 |
2011+ |
QFN |
685 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
DFN56 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
HWSON-8 |
986966 |
国产 |
|||
RENESAS |
20+ |
QFN8 |
2648 |
进口原装现货,假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
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2019-3-7
DdatasheetPDF页码索引
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