Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.2 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.2 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Built in SBD N Channel Power MOS FET High Speed Power Switching

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Built in SBD N Channel Power MOS FET High Speed Power Switching

文件：125.75 Kbytes Page：7 Pages

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

2.54mm (.100) Pitch C-Grid짰 Header, Dual Row, Shrouded, with PC Slot and Guide Ear, 24 Circuits, 0.38關m (15關) Gold (Au) Selective Plating

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2.54mm (.100) Pitch C-Grid짰 Header, Dual Row, Shrouded, with PC Slot and Guide Ear, 60 Circuits, Tn (Sn) Plating

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3.3 5V Limiting Amplifier for Applications from 100 Mbps to 1.25 Gbps

文件：467.45 Kbytes Page：27 Pages

Thin Film Mini-MELF Resistors

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