Silicon N Channel IGBT High Speed Power Switching

Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg

Silicon N Channel IGBT High Speed Power Switching

文件：91.42 Kbytes Page：8 Pages

Silicon N Channel IGBT High Speed Power Switching

文件：88.1 Kbytes Page：7 Pages

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,

IGBTs

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 90A 328.9W TO247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V - 50 A - IGBT High Speed Power Switching

文件：95.38 Kbytes Page：8 Pages

Silicon N Channel IGBT High Speed Power Switching

Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg

Silicon N Channel IGBT High Speed Power Switching

文件：91.42 Kbytes Page：8 Pages