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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3275 |
原厂直销,现货供应,账期支持! |
|||
RENESAS/瑞萨 |
25+ |
TO247 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS/瑞萨 |
24+ |
TO247 |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
25+ |
TO-247 |
32360 |
RENESAS/瑞萨全新特价RJH60F7DPQ-A0#T0即刻询购立享优惠#长期有货 |
|||
RENESAS |
2025+ |
TO-3P |
4755 |
全新原厂原装产品、公司现货销售 |
|||
RENESAS |
24+ |
TO-3P |
3000 |
全新原装环保现货 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
RENESAS/瑞萨 |
20+ |
TO-247 |
4800 |
原装现货支持BOM配单服务 |
|||
RENESAS/瑞萨 |
2023+ |
TO-247 |
4800 |
全新原装正品,优势价格 |
|||
Renesas |
21+ |
标准封装 |
340 |
进口原装,订货渠道! |
RJH60F7DPK规格书下载地址
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RJH60F7DPQ-A0 ，全新原装当天发货或门市自取0755-82732291.
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瀚佳科技(深圳)有限公司 专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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