Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5

IGBTs

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 50A 201.6W TO-247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V - 25 A - IGBT High Speed Power Switching

文件：95.83 Kbytes Page：8 Pages

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta =

Silicon N Channel IGBT High Speed Power Switching

文件：92.31 Kbytes Page：8 Pages

600 V - 25 A - IGBT High Speed Power Switching

600 V - 25 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 25 A, VGE= 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf= 90 ns typ. (at IC= 30 A, VCE

600 V - 25 A - IGBT High Speed Power Switching

600 V - 25 A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 25 A, VGE= 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching

600 V - 25 A - IGBT High Speed Power Switching

文件：86.06 Kbytes Page：7 Pages