位置：首页 > IC中文资料第12438页 > RJH60D1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-10A-IGBTApplication:Inverter Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(70nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=75ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features ●Shortcircuitwithstandtime(5styp.) ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiode(70nstyp.)inonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features ●Shortcircuitwithstandtime(5styp.) ●Lowcollectortoemittersaturationvoltage VCE(sat)=1.9Vtyp.(atIC=10A,VGE=15V,Ta=25°C) ●Builtinfastrecoverydiode(70nstyp.)inonepackage ●Trenchgateandthinwafertechnology ●Highspeedswitching | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter 文件：86.98 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-10A-IGBTApplication:Inverter 文件：111.47 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 10A 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
600V-10A-IGBTApplication:Inverter 文件：122.19 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 20A 20.8W TO220FL 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
SiliconNChannelIGBTApplication:Inverter 文件：88.32 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-10A-IGBTApplication:Inverter 文件：107.4 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
RJH60D1产品属性
- 类型
描述
- 型号
RJH60D1
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT
- Application
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
362 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Renesa |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RENESAS |
2023+ |
TO220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
Renesas |
22+ |
4LDPAK |
9000 |
原厂渠道,现货配单 |
|||
RENESAS |
1735+ |
TO220F |
6528 |
科恒伟业!只做原装正品!假一赔十! |
|||
RENESAS/瑞萨 |
24+ |
TO220-3 |
60000 |
全新原装现货 |
|||
RENESAS/瑞萨 |
24+ |
NA |
43250 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
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RJH60D1规格书下载地址
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DdatasheetPDF页码索引
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