位置：首页 > IC中文资料第12438页 > RJH60D0DPQ
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V-22A-IGBTApplication:Inverter Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
600V-22A-IGBTApplication:Inverter Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-22A-IGBTApplication:Inverter Features •Shortcircuitwithstandtime(5styp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=22A ·HighCurrentCapability ·HighInputImpedance APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingand | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
RJH60D0DPQ产品属性
- 类型
描述
- 型号
RJH60D0DPQ
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
600 V - 22 A - IGBT
- Application
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
21+ |
121 |
全新原装鄙视假货 |
||||
RENESAS |
24+ |
TO220F |
10000 |
公司现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
RENESAS |
2023+ |
TO220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
瑞萨 |
24+ |
NA/ |
17138 |
原厂直销,现货供应,账期支持! |
|||
RENESA |
2048+ |
TO-220F |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
|||
RENESAS/瑞萨 |
23+ |
TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Renesas |
22+ |
4LDPAK |
9000 |
原厂渠道,现货配单 |
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RJH60D0DPQ规格书下载地址
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RJH60F7DPQ-A0，全新原装当天发货或门市自取0755-82732291.
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RJH60F7DPQ，全新原装当天发货或门市自取0755-82732291.
2020-1-13
DdatasheetPDF页码索引
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