Silicon N Channel IGBT High Speed Power Switching

Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode

Silicon N Channel IGBT High Speed Power Switching

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 9.5A, RDS(ON) = 12.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

Field Service Kit, Red Large, ESD

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Silicon Monolithic Integrated Circuit

文件：362.07 Kbytes Page：5 Pages

Mulitifunction Backlight LED Driver for Small LCD Panels (Charge Pump Type)

文件：821.71 Kbytes Page：52 Pages