双通道精准运算放大器

RH1013M精密双通道运算放大器直接升级采用行业标准8引脚DIP LM158/MC1558/OP-221引脚配置的设计。RH1013M具有550µV的低失调电压、2.5µV/°C漂移和低20nA失调电流，可在整个工作温度范围内保证较大性能。RH1013M将高增益性能（最小120万）与94dB最小共模抑制和97dB电源抑制相结合。\n\n 晶圆批次采用我们内部开发适合严苛的军事和航空应用的Class S流程至良率电路(flow-to-yield circuit)进行处理。 • 在 -55至+125°C 工作温度范围内保证性能\n• 输入失调电压：550µV\n\n• 低失调电压漂移：2.5µV/°C\n\n• 低失调电流：20nA\n\n\n\n\n• 增益带宽积：500kHz\n\n• 最小压摆率：0.2V/mS\n\n• 低电流噪声：0.07pA/√Hz（典型值）\n\n• 最大电源电流：每个放大器 0.7mA\n\n• 电源电压：±22V（绝对最大值）\n\n• 差分输入电压：±30V（绝对最大值）\n\n• 单电源供电\n\n• 采用 CERPAC、陶瓷 DIP、金属罐或作为未封装的筛子\n辐射性能\n• 根据 TM1019.8、MIL-STD-883，;

Dual Precision Operational Amplifier

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Dual Precision Operational Amplifier

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Dual Precision Operational Amplifier

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FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.