型号 功能描述 生产厂家&企业 LOGO 操作
RFP10P03L

10A,30V,0.200ohm,LogicLevelP-ChannelPowerMOSFET

Description TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

HARRIS

HARRIS corporation

HARRIS
RFP10P03L

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
RFP10P03L

P-Channel60-V(D-S)MOSFET

文件:955.58 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

10A,30V,0.200W,LogicLevelP-ChannelPowerMOSFET

10A,30V,0.200Ohm,LogicLevel,P-ChannelPowerMOSFET TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.The

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

P-Channel30-V(D-S)MOSFET

文件:1.90259 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-ChannelPowerMOSFET

文件:911.63 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

RFP10P03L产品属性

  • 类型

    描述

  • 型号

    RFP10P03L

  • 功能描述

    MOSFET TO-220

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-17 13:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAR
2046+
9852
只做原装正品现货!或订货假一赔十!
HAR
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
I
23+
TO-220AB
6000
原装正品,支持实单
HAR
2020+
原厂封装
350000
100%进口原装正品公司现货库存
HAR
2023+
3000
进口原装现货
VBSEMI
19+
TO-220AB
29600
绝对原装现货,价格优势!
I
23+
TO-220A
8560
受权代理!全新原装现货特价热卖!
VB
2019
TO-220AB
55000
绝对原装正品假一罚十!
FAIRCHILD/仙童
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
I
2020+
TO-220A
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增

RFP10P03L芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

RFP10P03L数据表相关新闻