型号 功能描述 生产厂家 企业 LOGO 操作
RFP10P03L

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

INTERSIL

RFP10P03L

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

HARRIS

RFP10P03L

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RFP10P03L

10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET

RENESAS

瑞萨

RFP10P03L

P-Channel 60-V (D-S) MOSFET

文件:955.58 Kbytes Page:7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Power MOSFET

Description The G10P03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

FAIRCHILD

仙童半导体

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

INTERSIL

P-Channel 30-V (D-S) MOSFET

文件:1.90259 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Power MOSFET

文件:911.63 Kbytes Page:5 Pages

MCC

RFP10P03L产品属性

  • 类型

    描述

  • 型号

    RFP10P03L

  • 功能描述

    MOSFET TO-220

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-2 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTESIL
23+
TO-220
8000
专做原装正品,假一罚百!
INTERSIL/FSC
26+
TO-220
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
VBSEMI
20+
TO-220AB
5045
INTERSIL
17+
TO-220
6200
24+
N/A
3100
INTERSIL
26+
TO-220
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
I
24+
TO-220A
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTESIL
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HAR
9640
48
优势货源原装正品
I
23+
TO-220A
8560
受权代理!全新原装现货特价热卖!

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