位置：首页 > IC中文资料第299页 > RFP10N12L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
RFP10N12L产品属性
- 类型
描述
- 型号
RFP10N12L
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UCC |
23+ |
SOP8 |
12000 |
全新原装假一赔十 |
|||
INTERSIL |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
INTERSIL |
24+ |
TO.252-2.5 |
37500 |
原装正品现货,价格有优势! |
|||
ISC/固电 |
23+ |
TO-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
HOPERF/华普微 |
23+ |
MODULE |
50000 |
全新原装正品现货,支持订货 |
|||
NA |
NA |
1009 |
专营CANCDIP |
||||
HARRIS |
25+ |
TO-3 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
HAR |
2023+ |
3000 |
进口原装现货 |
||||
HARRIS |
1999 |
TO-3 |
1965 |
原装现货海量库存欢迎咨询 |
|||
24+ |
N/A |
3310 |
RFP10N12L芯片相关品牌
RFP10N12L规格书下载地址
RFP10N12L参数引脚图相关
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RFP10N12L数据表相关新闻
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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