型号 功能描述 生产厂家 企业 LOGO 操作
RFL1N18

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

Intersil

RFL1N18

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RFL1N18

1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS

ETC

知名厂家

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件:92.71 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS

ETC

知名厂家

1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High Efficiency and High Current Capability • Low Forward Voltage Drop and Low Power loss • Metal Silicon junction, majority carrier conduction • Epoxy meets UL 94 V-0 flamm

MCC

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For use in low voltage, high freq

DAESAN

Schottky Barrier Rectifiers Reverse Voltage 20 to 40 Volts Forward Current 1.0 Ampere

Reverse Voltage 20 to 40 Volts Forward Current 1.0 Ampere Features ◆ Low power loss, high efficiency ◆ Low leakage ◆ Low forward voltage ◆ High current capability ◆ High speed switching ◆ High surge capabitity ◆ High reliability

Good-Ark

固锝电子

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere

文件:262.23 Kbytes Page:3 Pages

RECTRON

丽正国际

SCHOTTKY BARRIER RECTIFIER

文件:23.38 Kbytes Page:2 Pages

RECTRON

丽正国际

RFL1N18产品属性

  • 类型

    描述

  • 型号

    RFL1N18

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2025-12-22 18:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
HARRIS
2025+
TO-39
4035
全新原厂原装产品、公司现货销售
HARRIS/哈里斯
93+
CAN
27
原装现货支持BOM配单服务
HAR
23+
RFL1N18
13528
振宏微原装正品,假一罚百
INTERSIL
CAN3
8650
一级代理 原装正品假一罚十价格优势长期供货
英德锡尔
23+
CAN3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
5000
公司存货
FSL
25+
SMD
2789
全新原装自家现货!价格优势!
HARRIS
专业铁帽
CAN3
4800
原装铁帽专营,代理渠道量大可订货
HARRIS
23+
CAN
5000
原装正品,假一罚十

RFL1N18数据表相关新闻