1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

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1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High Efficiency and High Current Capability • Low Forward Voltage Drop and Low Power loss • Metal Silicon junction, majority carrier conduction • Epoxy meets UL 94 V-0 flamm

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For use in low voltage, high freq

SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere

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