1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

N-Channel Power MOSFETs

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1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

DESCRIPTION RT1N15BX is a one chip transistor with built-in bias resistor,PNP type is RT1P15BX. FEATURE ◾ Built-in bias resistor (R2=100kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit.

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

DESCRIPTION RT1N15BX is a one chip transistor with built-in bias resistor,PNP type is RT1P15BX. FEATURE ◾ Built-in bias resistor (R2=100kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit.

Schottky Barrier Diode

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