-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface

DESCRIPTION The M25P10 is an 1 Mbit Paged Flash Memory fabricated with STMicroelectronics High Endurance CMOS technology. The memory is accessed by a simple SPI bus compatible serial interface. The bus signals are a serial clock input (C), a serial data input (D) and a serial data output (Q).

1 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface

Summary description The M25P10-A is a 1 Mbit (128K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors, e

1M BIT 2M BIT AND 4M BIT SERIAL FLASH MEMORY WITH 10MHZ SPI

[NexFlash] GENERAL DESCRIPTION The NX25P10 (1M-bit), NX25P20 (2M-bit) and NX25P40 (4M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. They are ideal for code download applications as well as storing voice, text and data. The devices operate o

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive