-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

1 Mbit, serial Flash memory, 50 MHz SPI bus interface

Description The M25P10-A is a 1 Mbit (128 Kbit x 8) serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors,

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

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30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

文件：1.01614 Mbytes Page：3 Pages

MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS

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