型号 功能描述 生产厂家 企业 LOGO 操作
RF1S25N06

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

RF1S25N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S25N06

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Intersil

N-Channel 60 V (D-S) MOSFET

文件:1.29338 Mbytes Page:9 Pages

VBSEMI

微碧半导体

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S25N06产品属性

  • 类型

    描述

  • 型号

    RF1S25N06

  • 功能描述

    MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-5 11:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
23+
SOT263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
63000
一级代理-主营优势-实惠价格-不悔选择
INTERSIL
2450+
SOT-263
6540
只做原装正品现货或订货!终端客户免费申请样品!
INTERSIL
23+
TO-263
50000
全新原装正品现货,支持订货
INTERSIL
23+
SOT263
8000
只做原装现货
HARRIS
25+23+
TO263
72650
绝对原装正品现货,全新深圳原装进口现货
INTERSIL
24+
TO-263
5000
全现原装公司现货
INTERSIL/FSC
NEW
TO-263
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
INTERSIL
2022+
SOT263
12000
原厂代理 终端免费提供样品
HARRIS
2022+
47
全新原装 货期两周

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