型号 功能描述 生产厂家 企业 LOGO 操作
RF1S25N06

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RF1S25N06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S25N06

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Intersil

N-Channel 60 V (D-S) MOSFET

文件:1.29338 Mbytes Page:9 Pages

VBSEMI

微碧半导体

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S25N06产品属性

  • 类型

    描述

  • 型号

    RF1S25N06

  • 功能描述

    MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-21 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
NA/
1580
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD/仙童
22+
SOT-263
100000
代理渠道/只做原装/可含税
INTERSIL/FSC
23+
TO-263
28610
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
HARRIS
25+23+
TO263
72650
绝对原装正品现货,全新深圳原装进口现货
INTERSIL
24+
TO-252
36800
Intersil
23+
SOT263
6000
原装正品,支持实单
INTERSIL
23+
65480
INTERSIL
2022+
SOT263
12000
原厂代理 终端免费提供样品
INTERSIL
23+
SOT263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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