EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

N-Channel, Power MOSFETs

Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET

The RLP1N08LE is a semi-smart monolithic power circuit which incorporates a lateral bipolar transistor, two resistors, a zener diode, and a PowerMOS transistor. Good control of the current limiting levels allows use of these devices where a shorted load condition may be encountered. “Logic level”