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REG104价格
参考价格：￥24.6673
型号：REG104FA-2.5KTTT 品牌：TI 备注：这里有REG104多少钱，2026年最近7天走势，今日出价，今日竞价，REG104批发/采购报价，REG104行情走势销售排行榜，REG104报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
REG104 | DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 |   | |
REG104 | 具有使能功能的 1A、15V、低压降稳压器 | TI 德州仪器 | | |
REG104 | DMOS 1A Low-Dropout Regulator 文件：763.91 Kbytes Page：21 Pages | BURR-BROWN | | |
REG104 | DMOS 1A Low-Dropout Regulator 文件：439.09 Kbytes Page：22 Pages | TI 德州仪器 | | |
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | |
REG104产品属性
- 类型
描述
- 型号
REG104
- 制造商
BB
- 制造商全称
BB
- 功能描述
DMOS 1A Low-Dropout Regulator
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-263-5 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
SOT223-5 |
7786 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI |
24+ |
SOT223-6 |
5630 |
TI一级代理原厂授权渠道实单支持 |
|||
TI |
23+ |
TO263-5 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI(德州仪器) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
TI |
19+ |
TO263-5 |
22800 |
||||
TI/德州仪器 |
23+ |
TO263-5 |
18204 |
原装正品代理渠道价格优势 |
|||
TI |
23+ |
SOT223 |
8000 |
原装正品,假一罚十 |
|||
TI |
24+ |
原厂封装 |
8000 |
原厂原装,价格优势,欢迎洽谈! |
|||
TI |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
REG104规格书下载地址
REG104参数引脚图相关
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- REG103UA-A/2K5
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- REG103UA-5
- REG103UA-3.3/2K5
- REG103UA-3.3
- REG103UA-2.5/2K5
- REG103UA-2.5
- REG103GA-A/2K5G4
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- REG103GA-5
- REG103GA-3.3
- REG103GA-3
- REG103GA-2.5
- REG103FA-AKTTT
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- REG103FA-2.5KTTT
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- REG102UA-A
- REG102
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- REF7050
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- REF6241
- REF6233
- REF6230
- REF6225
- REF6150
- REF6145
- REF6141
- REF6133
- REF6130
- REF6125
- REF6050
- REF6045
- REF6041
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产品描述：具有使能功能的 1A、15V、低压降稳压器
2022-5-9REF6125IDGKR
热门搜索： 2.5 V 0.05 % 参考电压 , 3.3 V 0.1 % 参考电压 , 1.8 V 参考电压 , ADR444 参考电压 , SOT-23-3 SMD/SMT 0.5 % 参考电压 , 2.5 V SO-8 0.05 % 参考电压
2020-7-13
DdatasheetPDF页码索引
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