REG104价格

参考价格:¥24.6673

型号:REG104FA-2.5KTTT 品牌:TI 备注:这里有REG104多少钱,2025年最近7天走势,今日出价,今日竞价,REG104批发/采购报价,REG104行情走势销售排行榜,REG104报价。
型号 功能描述 生产厂家 企业 LOGO 操作
REG104

DMOS 1A Low-Dropout Regulator

文件:439.09 Kbytes Page:22 Pages

TI

德州仪器

REG104

DMOS 1A Low-Dropout Regulator

文件:763.91 Kbytes Page:21 Pages

BURR-BROWN

REG104

具有使能功能的 1A、15V、低压降稳压器

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

DMOS 1A Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V,

TI

德州仪器

REG104产品属性

  • 类型

    描述

  • 型号

    REG104

  • 制造商

    BB

  • 制造商全称

    BB

  • 功能描述

    DMOS 1A Low-Dropout Regulator

更新时间:2025-10-4 17:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
24+
DDPAK/TO-263|5
70230
免费送样原盒原包现货一手渠道联系
ON/安森美
21+
TO263-5
30000
百域芯优势 实单必成 可开13点增值税
TEXASINSTRUM
23+
原厂封装
13528
振宏微原装正品,假一罚百
TI(德州仪器)
25+
5000
只做原装 假一罚百 可开票 可售样
TI(德州仪器)
24+
TO-263-5
1259
特价优势库存质量保证稳定供货
TI
19+
TO263-5
22800
TI/德州仪器
23+
TO263-5
18204
原装正品代理渠道价格优势
24+
5000
公司存货
TI
23+
SOT223
8000
原装正品,假一罚十
TI
24+
TO263-5
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增

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