REG104价格
参考价格：￥24.6673
型号：REG104FA-2.5KTTT 品牌：TI 备注：这里有REG104多少钱，2026年最近7天走势，今日出价，今日竞价，REG104批发/采购报价，REG104行情走势销售排行榜，REG104报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
REG104 | DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 |   | |
REG104 | 具有使能功能的 1A、15V、低压降稳压器 The REG104 is a family of low-noise, low-dropout linear regulators with low ground pin current. Its new DMOS topology provides significant improvement over previous designs, including low dropout voltage (only 230mV typ at full load), and better transient performance. In addition, no output capacito • NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability\n• FAST TRANSIENT RESPONSE\n• VERY LOW NOISE: 33µVRMS\n• HIGH ACCURACY: ±2% max\n• HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5µA\n• 2.5V, 2.7V, 3.0V,; | TI 德州仪器 | | |
REG104 | DMOS 1A Low-Dropout Regulator 文件：763.91 Kbytes Page：21 Pages | BURR-BROWN | | |
REG104 | DMOS 1A Low-Dropout Regulator 文件：439.09 Kbytes Page：22 Pages | TI 德州仪器 | | |
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-2.5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-3.3；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-5；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：REG104FA-A；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G25；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G33；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104G50；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | | ||
丝印代码：R104GA；DMOS 1A Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 230mV typ at 1A and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVRMS HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1.7mA at IOUT = 1A Not Enabled: IGND = 0.5μA 2.5V, 2.7V, | TI 德州仪器 | |
REG104产品属性
- 类型
描述
- Iout (Max) (A)：
1
- Vin (Max) (V)：
15
- Vin (Min) (V)：
2.7
- Vout (Max) (V)：
5.5
- Vout (Min) (V)：
1.3
- Fixed output options (V)：
2.5
- Noise (uVrms)：
33
- Iq (Typ) (mA)：
1.7
- Thermal resistance θJA (°C/W)：
27
- Rating：
Catalog
- Load capacitance (Min) (µF)：
0
- Regulated outputs (#)：
1
- Features：
Enable
- Accuracy (%)：
2
- Dropout voltage (Vdo) (Typ) (mV)：
230
- Operating temperature range (C)：
-40 to 85
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
TO263-5 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI |
24+ |
SOT223-6 |
5630 |
TI一级代理原厂授权渠道实单支持 |
|||
TI(德州仪器) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
TI |
19+ |
TO263-5 |
22800 |
||||
TI/德州仪器 |
23+ |
TO263-5 |
18204 |
原装正品代理渠道价格优势 |
|||
TI |
23+ |
SOT223 |
8000 |
原装正品,假一罚十 |
|||
TI |
24+ |
原厂封装 |
8000 |
原厂原装,价格优势,欢迎洽谈! |
|||
TI |
25+ |
SOT223-5 |
7786 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
BURR-BROWN |
2025+ |
SOT223 |
5000 |
原装进口,免费送样品! |
|||
TI/德州仪器 |
2023+ |
SMD |
53200 |
正品,原装现货 |
REG104规格书下载地址
REG104参数引脚图相关
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- REG104GA-AG4
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- REG104GA-5G4
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- REG104FA-A/500
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- REG104FA-5/500
- REG104FA-3.3KTTTG3
- REG104FA-3.3KTTT
- REG104FA-3.3/500
- REG104FA-2.5KTTTG3
- REG104FA-2.5KTTT
- REG103UA-A/2K5
- REG103UA-A
- REG103UA-5
- REG103UA-3.3/2K5
- REG103UA-3.3
- REG103UA-2.5/2K5
- REG103UA-2.5
- REG103GA-A/2K5G4
- REG103GA-A
- REG103GA-5
- REG103GA-3.3
- REG103GA-3
- REG103GA-2.5
- REG103FA-AKTTT
- REG103FA-5KTTT
- REG103FA-3.3KTTT
- REG103FA-2.7
- REG103FA-2.5KTTT
- REG103FA-2.5
- REG103
- REG102UA-A
- REG102
- REG101
- REF7050
- REF7030
- REF6250
- REF6245
- REF6241
- REF6233
- REF6230
- REF6225
- REF6150
- REF6145
- REF6141
- REF6133
- REF6130
- REF6125
- REF6050
- REF6045
- REF6041
REG104数据表相关新闻
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产品描述：具有使能功能的 1A、15V、低压降稳压器
2022-5-9REF6125IDGKR
热门搜索： 2.5 V 0.05 % 参考电压 , 3.3 V 0.1 % 参考电压 , 1.8 V 参考电压 , ADR444 参考电压 , SOT-23-3 SMD/SMT 0.5 % 参考电压 , 2.5 V SO-8 0.05 % 参考电压
2020-7-13
DdatasheetPDF页码索引
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