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REG103价格

参考价格:¥36.8563

型号:REG103FA-2.5 品牌:TI 备注:这里有REG103多少钱,2026年最近7天走势,今日出价,今日竞价,REG103批发/采购报价,REG103行情走势销售排行榜,REG103报价。
型号 功能描述 生产厂家 企业 LOGO 操作
REG103

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

REG103

具有电源正常指示和使能功能的 500mA、15V、低压降稳压器

The REG103 is a family of low-noise, low-dropout, linear regulators with low ground pin current. Its new DMOS topology provides significant improvement over previous designs, including low-dropout voltage (only 115mV typ at full load), and better transient performance. In addition, no output capacit • NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability\n• FAST TRANSIENT RESPONSE\n• VERY LOW NOISE: 33µVrms\n• HIGH ACCURACY: ±2% max\n• HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5µA\n• 2.5V, 2.7V, 3;

TI

德州仪器

REG103

DMOS 500mA Low Dropout Regulator

文件:166.13 Kbytes Page:19 Pages

BURR-BROWN

REG103

DMOS 500mA Low-Dropout Regulator

文件:1.14212 Mbytes Page:26 Pages

TI

德州仪器

丝印代码:REG103FA-2.5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-2.5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-2.5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-2.5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-3.3;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-3.3;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-3.3;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-5;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103FA-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103UA4;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U50;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:REG103U-A;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:R103G25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:R103G25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:R103G25;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:R103G33;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

丝印代码:R103G33;DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

REG103产品属性

  • 类型

    描述

  • Iout (Max) (A):

    0.5

  • Vin (Max) (V):

    15

  • Vin (Min) (V):

    2.7

  • Vout (Max) (V):

    5.5

  • Vout (Min) (V):

    1.3

  • Fixed output options (V):

    2.5

  • Noise (uVrms):

    33

  • Iq (Typ) (mA):

    1

  • Thermal resistance θJA (°C/W):

    150

  • Rating:

    Catalog

  • Load capacitance (Min) (µF):

    0

  • Regulated outputs (#):

    1

  • Features:

    Enable

  • Accuracy (%):

    2

  • PSRR @ 100 KHz (dB):

    20

  • Dropout voltage (Vdo) (Typ) (mV):

    115

  • Operating temperature range (C):

    -40 to 85

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOIC-8
4658
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
8-SOIC
4658
原装正品现货,原厂订货,可支持含税原型号开票。
TI/德州仪器
25+
SOT223-5
32000
TI/德州仪器全新特价REG103GA-A/2K5G4即刻询购立享优惠#长期有货
TI
23+
SOT223
7850
只做原装正品假一赔十为客户做到零风险!!
TI/德州仪器
SOT223
23+
6000
专业配单原装正品假一罚十
BURR-BROWN
5
明嘉莱只做原装正品现货
2510000
TO263
TI
24+
SOT223-6
5630
TI一级代理原厂授权渠道实单支持
TI
19+
TO-263-5
23000
TI/德州仪器
23+
SOT223-6
18204
原装正品代理渠道价格优势
TI
23+
SOT223
8000
原装正品,假一罚十

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