REG103价格

参考价格:¥36.8563

型号:REG103FA-2.5 品牌:TI 备注:这里有REG103多少钱,2026年最近7天走势,今日出价,今日竞价,REG103批发/采购报价,REG103行情走势销售排行榜,REG103报价。
型号 功能描述 生产厂家 企业 LOGO 操作
REG103

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

REG103

具有电源正常指示和使能功能的 500mA、15V、低压降稳压器

TI

德州仪器

REG103

DMOS 500mA Low-Dropout Regulator

文件:1.14212 Mbytes Page:26 Pages

TI

德州仪器

REG103

DMOS 500mA Low Dropout Regulator

文件:166.13 Kbytes Page:19 Pages

BURR-BROWN

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

DMOS 500mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 115mV Typ at 500mA and 3.3V Output Output Capacitor NOT Required for Stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 33μVrms HIGH ACCURACY: ±2% max HIGH EFFICIENCY: IGND = 1mA at IOUT = 500mA Not Enabled: IGND = 0.5μA 2.5V, 2.

TI

德州仪器

REG103产品属性

  • 类型

    描述

  • 型号

    REG103

  • 制造商

    BB

  • 制造商全称

    BB

  • 功能描述

    DMOS 500mA Low Dropout Regulator

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOIC-8
4658
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
8-SOIC
4658
原装正品现货,原厂订货,可支持含税原型号开票。
BURR-BROWN
5
明嘉莱只做原装正品现货
2510000
TO263
TI
24+
SOT223-6
5630
TI一级代理原厂授权渠道实单支持
TI
23+
SOT223
7850
只做原装正品假一赔十为客户做到零风险!!
TI/德州仪器
SOT223
23+
6000
专业配单原装正品假一罚十
TI
19+
TO-263-5
23000
TI/德州仪器
23+
SOT223-6
18204
原装正品代理渠道价格优势
TI
23+
SOT223
8000
原装正品,假一罚十
BURR-BROWN
2025+
5000
原装进口,免费送样品!

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