REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35-Q1 Ultra Low-Power, High-Precision Voltage Reference

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: −40°C to 125°C ambient operating temperature range • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 % (maximum) • Temperature coefficient: – 15 ppm/°C maximum for −40°C

35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Forward Voltage ● High Surge Current Capability ● Die Size 160mil SQ

35A HIGH VOLTAGE MOTOROLA TYPE PRESS-FIT DIODE

Features ● Glass Passivated Die Construction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

35A HIGH VOLTAGE GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

20 (7/28) AWG Tinned Copper

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35A HIGH VOLTAGE BOSCH TYPE PRESS-FIT DIODE

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