丝印代码：R32B；4ppm/°C, 100μA, SOT23-6 SERIES VOLTAGE REFERENCE

1FEATURES 2• Excellent Specified Drift Performance: – 7ppm/°C (max) at 0°C to +125°C – 20ppm/°C (max) at –40°C to +125°C • Microsize Package: SOT23-6 • High Output Current: ±10mA • High Accuracy: 0.01% • Low Quiescent Current: 100μA • Low Dropout: 5mV APPLICATIONS • Portable Equipm

丝印代码：R32B；4ppm/°C, 100μA, SOT23-6 SERIES VOLTAGE REFERENCE

1FEATURES 2• Excellent Specified Drift Performance: – 7ppm/°C (max) at 0°C to +125°C – 20ppm/°C (max) at –40°C to +125°C • Microsize Package: SOT23-6 • High Output Current: ±10mA • High Accuracy: 0.01% • Low Quiescent Current: 100μA • Low Dropout: 5mV APPLICATIONS • Portable Equipm

4ppm/C 100A, SOT23-6 SERIES VOLTAGE REFERENCE

文件：263.97 Kbytes Page：14 Pages

4ppm/C, 100UA, SOT23-6 SERIES VOLTAGE REFERENCE

文件：311.09 Kbytes Page：15 Pages

封装/外壳：SOT-23-6 包装：散装 描述：IC VREF SERIES 0.2% SOT23-6 集成电路（IC） 电压基准

丝印代码：R32B；4ppm/°C, 100μA, SOT23-6 SERIES VOLTAGE REFERENCE

1FEATURES 2• Excellent Specified Drift Performance: – 7ppm/°C (max) at 0°C to +125°C – 20ppm/°C (max) at –40°C to +125°C • Microsize Package: SOT23-6 • High Output Current: ±10mA • High Accuracy: 0.01% • Low Quiescent Current: 100μA • Low Dropout: 5mV APPLICATIONS • Portable Equipm

丝印代码：R32B；4ppm/°C, 100μA, SOT23-6 SERIES VOLTAGE REFERENCE

1FEATURES 2• Excellent Specified Drift Performance: – 7ppm/°C (max) at 0°C to +125°C – 20ppm/°C (max) at –40°C to +125°C • Microsize Package: SOT23-6 • High Output Current: ±10mA • High Accuracy: 0.01% • Low Quiescent Current: 100μA • Low Dropout: 5mV APPLICATIONS • Portable Equipm

4ppm/C, 100UA, SOT23-6 SERIES VOLTAGE REFERENCE

文件：311.09 Kbytes Page：15 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Optoisolator NPN Transistor Output

Features: Current Transfer Ratio: CTR: 50 Min @ IF = 5mA, VCE = 5V High Input–Output Isolation Voltage: VISO = 5000Vrms Compact DIP Package: NTE3220: 2–Channel Type (8–Lead DIP) NTE3221: 4–Channel Type (16–Lead DIP) Applications: Computer Terminals System Ap