REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

采用 3 引脚 SOT-23 封装的 2.5V、20ppm/°C（最大值）、100µA 串联电压基准

The REF31xx is a family of precision, low power, low dropout, series voltage references available in the tiny 3-pin SOT-23 package.\n\nThe REF31xx’s small size and low power consumption (100 µA typical) make it ideal for portable and battery-powered applications. The REF31xx does not require a load • Size Package: SOT23-3\n• Low Dropout: 5 mV\n• High Output Current: ±10 mA\n• High Accuracy: 0.2% Maximum\n• Low IQ: 115 µA Maximum\n• Excellent Specified Drift Performance: \n• 15 ppm/°C (Maximum) from 0°C to +70°C\n• 20 ppm/°C (Maximum) from –40°C to +125°C;

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：284.97 Kbytes Page：13 Pages

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：250.53 Kbytes Page：11 Pages

丝印代码：R31C；REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

丝印代码：R31C；REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

丝印代码：R31C；REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

ADS78/8505EVM Users Guide

Features · Full-Featured Evaluation Board for the ADS7804, ADS7805 or ADS8505, parallel Analog to Digital Converters · Industry Standard ±10 V Analog Input Range · Built in reference · Parallel Interface with 3-state output drivers · Compatible with the 5-6K Interface Board for use with a va

丝印代码：R31C；REF31xx 15ppm/°C Maximum, 100-μA, SOT-23 Series Voltage Reference

1 Features 1• MicroSize Package: SOT23-3 • Low Dropout: 5 mV • High Output Current: ±10 mA • High Accuracy: 0.2% Maximum • Low IQ: 115 μA Maximum • Excellent Specified Drift Performance: – 15 ppm/°C (Maximum) from 0°C to +70°C – 20 ppm/°C (Maximum) from –40°C to +125°C 2 Application

Contains all support circuitry needed for the ADS1174/ADS1274

文件：2.69622 Mbytes Page：48 Pages

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：250.53 Kbytes Page：11 Pages

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：284.97 Kbytes Page：13 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.2% SOT23-3 集成电路（IC） 电压基准

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：284.97 Kbytes Page：13 Pages

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：284.97 Kbytes Page：13 Pages

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：250.53 Kbytes Page：11 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.2% SOT23-3 集成电路（IC） 电压基准

15ppm/C Max, 100UA, SOT23-3 SERIES VOLTAGE REFERENCE

文件：284.97 Kbytes Page：13 Pages

15 ppm Maximum, 100-uA, SOT-23 Series Voltage Reference

文件：573.84 Kbytes Page：23 Pages

15 ppm Maximum, 100-uA, SOT-23 Series Voltage Reference

文件：573.84 Kbytes Page：23 Pages

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with t

Quad Bus Switch with Individual Active Low Enables

General Description The VS3125 contains a set of four high-speed, low-resistance bus switches. Each bus switch is individually controlled by TTL-compatible, active-low control input (/xOE). The low ON resistance of VS3125 allows inputs to be connected to outputs without adding propagation delay a

Quad Bus Switch with Individual Active Low Enables

General Description The VS3125 contains a set of four high-speed, low-resistance bus switches. Each bus switch is individually controlled by TTL-compatible, active-low control input (/xOE). The low ON resistance of VS3125 allows inputs to be connected to outputs without adding propagation delay a

QUADRUPLE FET BUS SWITCH

文件：64.81 Kbytes Page：4 Pages