Precision Micropower, Low Dropout Voltage References

GENERAL DESCRIPTION The REF19x series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy. FEATURES Initial ac

3.3V精密、微功耗、低压差、低压基准电压源

REF19x系列精密带隙基准电压源采用温度漂移曲率校正专利电路，并对高稳定性薄膜电阻进行激光调整，从而实现极低的温度系数和高初始精度。 该系列由微功耗、低压差(LDV)器件组成，可利用仅比输出电压高出100 mV的电源提供稳定的输出电压，耗用的电源电流低于45 μA。通过对SLEEP 引脚施加低TTL或CMOS电平，可以使能休眠模式。在休眠模式下，输出关闭，电源电流进一步降至15 μA以下。\n\n REF19x系列基准电压源的额定温度范围为−40°C至+85°C工业温度范围，典型性能规格的温度范围为−40°C至+125°C，适合汽车等应用领域。   \n\n 电 • 初始精度：±2 mV（最大值）\n\n• 温度系数：5 ppm/°C（最大值）\n\n• 低电源电流：45 µA（最大值）\n\n• 休眠模式：15 µA（最大值）;

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Evaluation Board User Guide

文件：558.04 Kbytes Page：12 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.3% 8SOIC 集成电路（IC） 电压基准

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.3% 8SOIC 集成电路（IC） 电压基准

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

Precision Micropower, Low Dropout Voltage References

文件：649.04 Kbytes Page：28 Pages

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

LM196/LM396 10 Amp Adjustable Voltage Regulator

文件：295.32 Kbytes Page：14 Pages