位置：首页 > IC中文资料第241页 > RD8.2EB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RD8.2EB | 500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500mWDHDZENERDIODEDO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECHSemtech Corporation 升特 |  | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECHSemtech Corporation 升特 | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECHSemtech Corporation 升特 | | | |
SILICONPLANARZENERDIODE 文件：239.94 Kbytes Page：4 Pages | SEMTECHSemtech Corporation 升特 | | | |
SILICONPLANARZENERDIODE 文件：280.13 Kbytes Page：4 Pages | SEMTECHSemtech Corporation 升特 | | |
RD8.2EB产品属性
- 类型
描述
- 型号
RD8.2EB
- 制造商
Panasonic Industrial Company
- 功能描述
DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA |
1986 |
专做原装正品,假一罚百! |
|||
NEC |
25+23+ |
New |
36203 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
24+ |
DO-214AC |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
NEC |
22+ |
DO-214AC |
19850 |
原装正品现货 |
|||
24+ |
5000 |
公司存货 |
|||||
SUNMATE(森美特) |
2019+ROHS |
SMA(DO-214AC) |
66688 |
森美特高品质产品原装正品免费送样 |
|||
NEC |
16+ |
SOD-106 |
69000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
NEC |
1923+ |
原厂封装 |
35689 |
绝对进口原装现货库存特价销售 |
|||
NEC |
20+ |
SOD-106 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
原厂原装 |
3005 |
优势库存 |
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RD8.2EB规格书下载地址
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DdatasheetPDF页码索引
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