位置:首页 > IC中文资料第9333页 > RD120EB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RD120EB | 500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | ||
RD120EB | ZENER DIODES ZENER DIODES Applications Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. | SEMTECH_ELEC 先之科半导体 | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |||
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W | NEC 瑞萨 | |||
ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage | MOTOROLA 摩托罗拉 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | |||
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12 | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(5.0A,60-100V,65W) designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll | MOSPEC 统懋 |
RD120EB产品属性
- 类型
描述
- 型号
RD120EB
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
500 mW DHD ZENER DIODE DO-35
RD120EB芯片相关品牌
RD120EB规格书下载地址
RD120EB参数引脚图相关
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RD120EB数据表相关新闻
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2019-1-9
DdatasheetPDF页码索引
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