Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：470.04 Kbytes Page：7 Pages

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：470.04 Kbytes Page：7 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：DIODE GEN PURP 600V 5A TP 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：DIODE GEN PURP 600V 5A TPFA 分立半导体产品 二极管 - 整流器 - 单

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：470.04 Kbytes Page：7 Pages

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