位置：首页 > IC中文资料第9902页 > RD0506T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RD0506T | Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance | SANYO 三洋 |   | |
RD0506T | Planar Ultrafast Rectifier Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance | ONSEMI 安森美半导体 | | |
Planar Ultrafast Rectifier Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance | ONSEMI 安森美半导体 | | ||
Planar Ultrafast Rectifier Planar Ultrafast Rectifier Fast trr type, 5A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low noise at the time of reverse recovery • Low forward voltage (VF max=1.6V) • Halogen free compliance | ONSEMI 安森美半导体 | | ||
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode 文件：470.04 Kbytes Page：7 Pages | SANYO 三洋 | | ||
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode 文件：470.04 Kbytes Page：7 Pages | SANYO 三洋 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：DIODE GEN PURP 600V 5A TP 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：DIODE GEN PURP 600V 5A TPFA 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode 文件：470.04 Kbytes Page：7 Pages | SANYO 三洋 | | ||
Silicon Protection Circuits - TVS Rail Clamp Diode Array with an Avalanche Diode TVS Rail Clamp Diode Array with an Avalanche Diode This family of rail clamp or “diode steering” arrays are designed for very low capacitance ESD protection and is offered in small surface mount packages. An Avalanche diode has been added between VP and VN to suppress transients on the supply rai | LITTELFUSE 力特 | | ||
Transient Voltage Protection Device 75 to 320 Volts Features • Oxide-Glass passivated Junction • Bi-Directional protection in a single device • Surge capabilities up to 80A@10/1000us or 250A@8/20us • High Off-State impedance and Low On-State voltage • Plastic material has UL flammability classification 94V -0 | MCC | | ||
Silicon Protection Circuits - TVS Rail Clamp Array in a Surface Mount Package 文件：199.31 Kbytes Page：4 Pages | LITTELFUSE 力特 | | ||
Silicon Protection Circuits - TVS Rail Clamp Array in a Surface Mount Package 文件：199.31 Kbytes Page：4 Pages | LITTELFUSE 力特 | | ||
Silicon Protection Circuits - TVS Rail Clamp Array in a Surface Mount Package 文件：199.31 Kbytes Page：4 Pages | LITTELFUSE 力特 | |
RD0506T产品属性
- 类型
描述
- 型号
RD0506T
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
onsemi(安森美) |
25+ |
TO-252-3 |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
万宝 |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON/安森美 |
22+ |
TO-252 |
98014 |
||||
onsemi |
25+ |
TP |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
RECOM |
25+ |
SIP |
55000 |
原厂渠道原装正品假一赔十 |
|||
RECOM |
25+23+ |
72755 |
绝对原装正品现货,全新深圳原装进口现货 |
RD0506T规格书下载地址
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2019-1-9
DdatasheetPDF页码索引
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