型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

Intel

英特尔

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

Micron

美光

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

????????????旺宏电子

RC28F160C3TC产品属性

  • 类型

    描述

  • 型号

    RC28F160C3TC

  • 功能描述

    IC FLASH 16MBIT 70NS 64BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    150

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    4K(2 x 256 x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    2.5 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-VFDFN 裸露焊盘

  • 供应商设备封装

    8-DFN(2x3)

  • 包装

    管件

  • 产品目录页面

    1445(CN2011-ZH PDF)

更新时间:2025-10-26 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
INTEL
18+
BGA
26734
全新原装现货,可出样品,可开增值税发票
Micron
22+
64EasyBGA
9000
原厂渠道,现货配单
INTEL/英特尔
24+
BGA
9600
原装现货,优势供应,支持实单!
INTEL/英特尔
24+
FBGA64
990000
明嘉莱只做原装正品现货
INTEL
2006
BGA
150
现货库存/价格优惠热卖
Micron Technology Inc.
24+
64-EasyBGA(10x13)
56200
一级代理/放心采购
INTEL
829
BGA
4
原装特价/满额包邮
INTEL
1923+
BGA
6900
只做进口原装品质决定一切价格优惠
INTEL/英特尔
23+
BGA
50000
全新原装正品现货,支持订货

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