3 Volt Intel StrataFlash Memory

Product Overview The 0.25 µ 3 Volt Intel StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organize

Intel StrataFlash짰 Memory

文件：990.7 Kbytes Page：72 Pages

Intel StrataFlash Memory (J3)

Intel StrataFlash Memory (J3)

文件：905.78 Kbytes Page：72 Pages

Intel StrataFlash Memory (J3)

文件：905.78 Kbytes Page：72 Pages

Intel StrataFlash Memory (J3)

文件：905.78 Kbytes Page：72 Pages

Intel StrataFlash Memory (J3)

文件：905.78 Kbytes Page：72 Pages

Intel StrataFlash Memory (J3)

文件：905.78 Kbytes Page：72 Pages

3 Volt Intel StrataFlash Memory

Intel StrataFlash짰 Memory

文件：990.7 Kbytes Page：72 Pages

3 Volt Intel StrataFlash Memory

Product Overview The 0.25 µ 3 Volt Intel StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organize

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

NOR Cell Architecture

文件：1.25619 Mbytes Page：15 Pages

128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY

文件：35.62 Kbytes Page：6 Pages