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型号 功能描述 生产厂家 企业 LOGO 操作
RBV1501

Silicon Bridge Rectifiers

FEATURES ● Rating to 1000V PRV ● Surge overload rating to 200 Amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique results in inexpensive product ● Lead solderable per MIL-STD-202 method 208

BILIN

银河微电

RBV1501

SILICON BRIDGE RECTIFIERS

FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VAC @1 Sec * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RBV1501

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb

SYNSEMI

RBV1501

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 15.0 A Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 200 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 metho

LUGUANG

鲁光电子

RBV1501

Bridges: 10.0 to 50.0 amps

SYNSEMI

RBV1501

SILICON BRIDGE RECTIFIERS

文件:50.47 Kbytes Page:2 Pages

EIC

RBV1501

SILICON BRIDGE RECTIFIERS

文件:19.79 Kbytes Page:2 Pages

EIC

RBV1501

SILICON BRIDGE RECTIFIERS

文件:164.8 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:132.75 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:97.58 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:18.46 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:155.77 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印代码:M1501;1.6 GHz GaAs LOW NOISE AMPLIFIER

The MRFIC1501 is a low cost yet high performance two–stage, low–noise amplifier designed primarily for use in Global Positioning Satellite System (GPS) and other L–band satellite receivers. The broadband nature of the design makes the device applicable to a variety of L–band applications where hig

MOTOROLA

摩托罗拉

N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

N - CHANNEL POWER MOS FET ARRAY SWITCHING TYPE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications

文件:367.82 Kbytes Page:22 Pages

NSC

国半

PLLatinumTM 1.1 GHz Frequency Synthesizer for RF Personal Communications

文件:367.82 Kbytes Page:22 Pages

NSC

国半

RBV1501产品属性

  • 类型

    描述

  • part number:

    RBV1501

  • amps:

    15.0

  • voltage:

    100.0

  • data sheet:

    BDG-RBV1500.PDF

更新时间:2026-8-3 9:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
25+
RBV-15
90000
一级代理商进口原装现货、价格合理
SANKEN
23+
扁桥
80000
主营桥堆系列,真实库存

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