SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 10 A Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Am peres peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing m olded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 m eth

Bridges: 10.0 to 50.0 amps

SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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Molding Single-Phase Bridge Rectifier

100 V ~ 1000 V 10.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier FEATURES Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 This Series is UL listed under the Recognized Component index, file number E231047 Single-in-line p

SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SILICON BRIDGE RECTIFIERS

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SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp