Schottky barrier diode

Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Applications Switching power supply

Schottky Barrier Diode

Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Applications Switching power supply

Schottky Barrier Diodes

为支持现有客户而生产的产品。不对新设计出售此产品。 •阴极共通型(TO-220)。\n•低IR型、高可靠性。;

40V, 30A, 肖特基势垒二极管

RB225T-40NZ是面向开关电源的低IR肖特基势垒二极管。 •阴极共通型(TO-220)。\n•低IR型、高可靠性。;

Schottky Barrier Diode

Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Applications Switching power supply

Schottky barrier diode

Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Applications  Switching power supply

Schottky Barrier Diodes

为支持现有客户而生产的产品。不对新设计出售此产品。 •阴极共通型(TO-220)。\n•低IR型、高可靠性。;

Schottky barrier diode

Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Applications Switching power supply

封装/外壳：TO-220-3 整包 包装：管件 描述：DIODE ARRAY SCHOTTKY 40V TO220FN 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Diode

文件：992.37 Kbytes Page：4 Pages

Schottky Barrier Diode

文件：992.37 Kbytes Page：4 Pages

封装/外壳：TO-220-3 整包 包装：剪切带（CT）Digi-Reel® 得捷定制卷带管件 描述：40V, 30A, ITO-220AB, SCHOTTKY BA 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier diode

文件：991.36 Kbytes Page：4 Pages

Schottky barrier diode

文件：307.53 Kbytes Page：4 Pages

Schottky barrier diode

文件：307.53 Kbytes Page：4 Pages

Schottky barrier diode

文件：991.36 Kbytes Page：4 Pages

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES • E

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction t

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Silicon Controlled Rectifiers Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrant 1)