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型号 功能描述 生产厂家 企业 LOGO 操作
RB152G

SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 50 Amperes peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Mounting Position: Any ◇ Glass pas

BILIN

银河微电

RB152G

Bridge Rectifier

1.5A Glass Passivated Single-Phase Bridge Rectifiers-50-1000V Features • Surge overload rating 50 amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique results in expensive product • Lead-free parts for green partner, meet RoHS

FORMOSA

美丽微半导体

RB152G

MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

JGD

固锝电子

RB152G

1.5A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • High case dielectric strength • Typical IR less than 0.1µA • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds 0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension • RoHS c

TAITRON

RB152G

Bridge

FORMOSA

美丽微半导体

Bridge Rectifiers Diodes

CHENMKO

力勤

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

PANASONIC

松下

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

PANASONIC

松下

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

PANASONIC

松下

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

MOSPEC

统懋

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle

NEC

瑞萨

RB152G产品属性

  • 类型

    描述

  • VRRM(V):

    100

  • VR(V):

    100

  • IO(A):

    1.5

  • IFSM(A):

    50

  • VF(V) Max.:

    1.1

  • IF(A):

    1.5

  • IR(μA) Max:

    10

  • IR(μA)Max_VR(V):

    100

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