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R60晶体管资料
R60别名:R60三极管、R60晶体管、R60晶体三极管
R60生产厂家:
R60制作材料:Si-P+R
R60性质:开关管 (SW)
R60封装形式:贴片封装
R60极限工作电压:
R60最大电流允许值:0.1A
R60最大工作频率:<1MHZ或未知
R60引脚数:3
R60最大耗散功率:
R60放大倍数:
R60图片代号:H-15
R60vtest:0
R60htest:999900
- R60atest:0.1
R60wtest:0
R60代换 R60用什么型号代替:KSR2110,
R60价格
参考价格:¥475.9739
型号:R6000 品牌:Brady 备注:这里有R60多少钱,2025年最近7天走势,今日出价,今日竞价,R60批发/采购报价,R60行情走势销售排行榜,R60报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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R60 | Thermometrics temperature sensor solutions 文件:1.44125 Mbytes Page:16 Pages | AMPHENOLAmphenol Corporation 安费诺集团美国安费诺集团 | ||
General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Features: □StandardandReverse PolaritieswithColorCodedSeals □FlagLeadandStudTop TerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltage □SpecialElectricalSelectionfor ParallelandSeriesOperation □GlazedCeramicSealGives HighVoltage | POWEREX Powerex Power Semiconductors | |||
olts CURRENT 0.2 Ampere VOLTAGE RANGE 6000 V HIGH VOLTAGE FAST RECOVER RECTIFIER FEATURES *Lowcost *Lowleakage *Lowforwardvoltagedrop *Highcurrentcapability | RECTRON Rectron Semiconductor | |||
0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts Features •AVALANCHEOPERATION •UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOND •BEVELEDROUNDCHIP •LOWCOST | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
Nch 600V 2A Power MOSFET lFeatures 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 4A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 6A Power MOSFET lFeatures 1)Lowon-resistance 2)Ultrafastswitching 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant lApplication Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 7A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 9A Power MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. 5)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 9A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
DISTRIBUTED GATE THYRISTORS [Westcode] DistributedGateThyristors~Alltypes | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | |||
General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Features: □StandardandReverse PolaritieswithColorCodedSeals □FlagLeadandStudTop TerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltage □SpecialElectricalSelectionfor ParallelandSeriesOperation □GlazedCeramicSealGives HighVoltage | POWEREX Powerex Power Semiconductors | |||
Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 2m ProductDescription Twometer,Cat6IP20ruggedizedmetal-bodyRJ45cordset,unshieldedwithsolidconductors(Beldencable7940A) | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 3m ProductDescription Threemeter,Cat6IP20ruggedizedmetal-bodyRJ45cordset,unshieldedwithsolidconductors(Beldencable7940A) | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
Cord Sets, DataTuff® Cat 6 IP20 Metal-Body RJ45 Cord Set, 5m ProductDescription Fivemeter,Cat6IP20ruggedizedmetal-bodyRJ45cordset,unshieldedwithsolidconductors(Beldencable7940A) | BELDENBelden Inc. 百通电缆设计科技有限公司 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Application Switching Structure SiliconN-channelMOSFET | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 11A Power MOSFET Features 1)Lowon-resistance 2)Lowradiationnoise 3)Drivecircuitscanbesimple 4)Paralleluseiseasy 5)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 11A Power MOSFET Features 1)Lowon-resistance 2)Ultrafastswitchingspeed 3)Paralleluseiseasy 4)Pb-freeplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy Applications Switching Structure SiliconN-channelMOSFET | ROHMRohm 罗姆罗姆半导体集团 | |||
N-Channel 650 V (D-S) MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 12A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 12A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 250mohm(typ.) Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant 6)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 250mohm(typ.) Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant 6)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 14A Power MOSFET Features 1)Lowon-resistance 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeleadplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 215mohm(typ.) Power MOSFET Features 1)Lowon-resistance 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 215mohm(typ.) Power MOSFET Features 1)Lowon-resistance 2)Fastswitching 3)Paralleluseiseasy 4)Pb-freeleadplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)HighESD. Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
N-Channel 650-V (D-S) Super Junction MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 18A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 170mohm(typ.) Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant 6)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Fast Recovery Rectifier (250 Amperes Average 1600 Volts) Features: □FastRecoveryTimes □SoftRecoveryCharacteristics □StandardandReversePolarities □FlagLeadandStudTopTerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltages □SpecialElectricalSelectionforParallelandSeriesOperation □GlzaedCeramicSeal | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (350Amperes Average 1600 Volts) FastRecoveryRectifier350AmperesAverage1600Volts | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (250 Amperes Average 1600 Volts) Features: □FastRecoveryTimes □SoftRecoveryCharacteristics □StandardandReversePolarities □FlagLeadandStudTopTerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltages □SpecialElectricalSelectionforParallelandSeriesOperation □GlzaedCeramicSeal | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (350Amperes Average 1600 Volts) FastRecoveryRectifier350AmperesAverage1600Volts | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (250 Amperes Average 1600 Volts) Features: □FastRecoveryTimes □SoftRecoveryCharacteristics □StandardandReversePolarities □FlagLeadandStudTopTerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltages □SpecialElectricalSelectionforParallelandSeriesOperation □GlzaedCeramicSeal | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (350Amperes Average 1600 Volts) FastRecoveryRectifier350AmperesAverage1600Volts | POWEREX Powerex Power Semiconductors | |||
10V Drive Nch MOSFET 10VDriveNchMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching Structure SiliconN-channelMOSFET | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET •Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)HighESD. •Application Switching •Structure SiliconN-channelMOSFET | ROHMRohm 罗姆罗姆半导体集团 | |||
10V Drive Nch MOSFET Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 20A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 20A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 20A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 20A Power MOSFET Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 20A Power MOSFET Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Paralleluseiseasy 4)Pb-freeleadplating;RoHScompliant Application Switching | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 154mohm(typ) Power MOSFET Features 1)Lowon-resistance. 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 154mohm(typ) Power MOSFET Features 1)Lowon-resistance 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Nch 600V 154mohm(typ) Power MOSFET Features 1)Lowon-resistance 2)Fastswitching 3)Drivecircuitscanbesimple 4)Pb-freeplating;RoHScompliant 5)Halogenfreemoldcompound Application Switchingapplications | ROHMRohm 罗姆罗姆半导体集团 | |||
Fast Recovery Rectifier (250 Amperes Average 1600 Volts) Features: □FastRecoveryTimes □SoftRecoveryCharacteristics □StandardandReversePolarities □FlagLeadandStudTopTerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltages □SpecialElectricalSelectionforParallelandSeriesOperation □GlzaedCeramicSeal | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (350Amperes Average 1600 Volts) FastRecoveryRectifier350AmperesAverage1600Volts | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (250 Amperes Average 1600 Volts) Features: □FastRecoveryTimes □SoftRecoveryCharacteristics □StandardandReversePolarities □FlagLeadandStudTopTerminalsAvailable □HighSurgeCurrentRatings □HighRatedBlockingVoltages □SpecialElectricalSelectionforParallelandSeriesOperation □GlzaedCeramicSeal | POWEREX Powerex Power Semiconductors | |||
Fast Recovery Rectifier (350Amperes Average 1600 Volts) FastRecoveryRectifier350AmperesAverage1600Volts | POWEREX Powerex Power Semiconductors |
R60产品属性
- 类型
描述
- 型号
R60
- 制造商
Datak Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
23+ |
SOP8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
台湾陆海 |
2024+ |
插件 |
500000 |
诚信服务,绝对原装原盘 |
|||
ROHM/罗姆 |
10+10+ |
TO-247 |
262 |
原装进口无铅现货 |
|||
POWEREX |
19+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
ROHM CO.,LTD. |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ROHM/罗姆 |
24+ |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ROHM/罗姆 |
24+ |
TO-220F |
9000 |
只做原装专注ROHM全部型号可以开增值税13点 |
|||
ANY |
新 |
490 |
全新原装 货期两周 |
||||
ROHIM |
19+ |
TO-220F |
12000 |
||||
ROHM |
2024 |
TO-220F |
11846 |
全新原装正品,现货销售 |
R60规格书下载地址
R60参数引脚图相关
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R60数据表相关新闻
R5S72690W266BG 32位微控制器-MCU
R5S72690W266BG32位微控制器-MCU
2023-12-29R-78B3.3-1.0L
优势渠道
2023-11-3R7F0C009A2DSP-C#AA0
R7F0C009A2DSP-C#AA0,全新.当天发货0755-82732291当天发货或门市自取.QQ:1755232575/QQ:1157611585,微信号:87680558.
2021-5-26R7F0C01072DNP, R7F0C010B2DFP-C, UPD79F7023,
R7F0C01072DNP, R7F0C010B2DFP-C, UPD79F7023,
2020-7-20R5R0C028FA#V0深圳市唯有度科技有限公司
只做进口原装正品,假一罚十!
2020-4-30R5S37032AC4A00FT全新原装现货
可立即发货
2019-9-24
DdatasheetPDF页码索引
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