Key Features

• Gain, return loss and bias externally adjustable

• On-chip active bias for consistent bias current and

repeatable performance

• DC – 2000 MHz bandwidth

• Low noise: typical NF < 2 dB to 1000 MHz

• Flexible 5 V to 8 V biasing

• IDD = 120 mA typical at VDD 5 V in application

circuit

• 19 dB typical gain in application circuit

• +40 dBm typical OIP3

• +61 dBm typical OIP2

• +21 dBm typical P1dB

• Low distortion: CSO -66 dBc, CTB -78 dBc

• (10 dBmV / ch at input, 80 ch NTSC flat)

• pHEMT device technology