Key Features

 Gain: 12 dB @ 1218 MHz

 Bandwidth: 5 – 1218 MHz

 OIP3: + 42 dBm

 OP1dB: 24 dBm

 Low Noise Figure: 4 dB

 Excellent Composite Distortion

 pHEMT GaAs device technologies

 Compact Size: 8-pin SOIC

 Power Consumption (5 V, 280 mA,1.4 W)