位置:QPD1035L > QPD1035L详情

QPD1035L中文资料

厂家型号

QPD1035L

文件大小

2050.65Kbytes

页面数量

21

功能描述

40 W, 50 V, DC – 6 GHz, GaN RF Power Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

QORVO

QPD1035L数据手册规格书PDF详情

Product Overview

The QPD1035L is a 40W (P3dB) discrete GaN on SiC

HEMT which operates from DC to 6 GHz on a 50V supply

rail. The device has an input pre-match and is ideally

suitable for broadband amplifier application for pulsed

and CW operations.

Key Features

• Operating Frequency Range: DC – 6 GHz

• Operating Voltage: 50 V

• Output Power (P3dB) = 50 W (1)

• Drain Efficiency (P3dB) = 52.2 % (1)

• Linear Gain = 15.1 dB (1)

• Low thermal resistance package

Applications

• Military Radar

• Civilian Radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

更新时间:2025-11-29 10:03:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Qorvo
99
QORVO
24+
con
10000
查现货到京北通宇商城
QORVO
24+
con
2500
优势库存,原装正品
QORVO
24+
N/A
130
原装原装原装
Qorvo(威讯联合)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
24+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
TRIQUINT
638
原装正品
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
F
23+
65480
QualtekElectronicsCorp.
43
全新原装 货期两周