PLASTIC SILICON INFRARED PHOTOTRANSISTOR

DESCRIPTION The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. FEATURES • NPN Silicon Phototransistor • Package Type: T-1 3/4 • Notched Emitter: QED12X/QED22X/QED23X • Narrow Reception Angle: 24°C • Daylight Filter • Package Material and

塑料硅红外光电晶体管

QSD122/QSD123/QSD124是一种密封于红外线透明、黑色T-1 3/4封装包中的硅光电晶体管。 •NPN硅光电晶体管\n•封装类型： T-1 3/4\n•陷波发射极： QED12X/QED22X/QED23X\n•窄接收角： 24°C\n•日光过滤器\n•封装材料和颜色： 黑色环氧树脂\n•高灵敏度;

PLASTIC SILICON PHOTOTRANSISTOR

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Plastic Silicon Infrared Phototransistor

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封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

丝印代码：-05；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space