PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Description The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. Features ■ Tight production distribution ■ Steel lead frames for improved reliability in solder mounting ■ Good optical-to-mechanical alignment ■ Plastic package is infrare

Plastic Silicon Infrared Phototransistor

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Plastic Silicon Infrared Phototransistor

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Plastic Silicon Infrared Phototransistor

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封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR） 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

PLASTIC SILICON PHOTOTRANSISTOR

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PLASTIC SILICON PHOTOTRANSISTOR

封装/外壳：径向，3mm 直径（T-1） 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

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