QS18系列通用型光电传感器

采用通用外壳设计，配备18毫米螺纹圆柱，是多种款式传感器的理想替代品。\n\n• 通用外壳，18毫米螺纹圆柱安装或者侧面安装\n\n• 可以替代多种款式的传感器\n\n• 符合IP67和NEMA 6标准，适合用于恶劣环境\n\n• 提供对射、偏振和非偏振反射板式、聚焦式、常规漫反式和宽光束 漫反式、小光斑漫射、激光、超声波、塑料或玻璃光纤、定区域式和可调区域式\n\n• 专家型 QS18E和超声波型号有示教按键，设置简易\n\n• 检测范围可达20米\n\n• 具有360°可见的明亮LED状态指示灯\n\n• 有带IO-Link通信的型号，简化了布线、安装和维护，方便传感器备份\n\n• 在机

包装：盒 描述：PHOTO SEN EMITTER 3M 传感器，变送器 光学传感器 - 光电，工业

Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier

Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/c

Silicon Complementary Transistors Medium Power Audio Amplifier

Features: • 5W Output in Complementary Pair

OPAx186 Precision, Rail-to-Rail Input/Output, 24-V, Zero-Drift Operational Amplifiers

1 Features • High precision: – Offset drift: 0.01 μV/°C – Low offset voltage: 1 μV • Low quiescent current: 90 μA • Excellent dynamic performance: – Gain bandwidth: 750 kHz – Slew rate: 0.35 V/μs • Robust design: – RFI/EMI filtered inputs • Rail-to-rail input/output • Supply range: 4.5

Silicon PIN Photodiode

Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ p ≥ 900 nm). The large active area combined with a flat case gives a high sensitivity at

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE